2SD596 datasheet(1/3 Pages) HTSEMI

Teilenummer	2SD596

Bauteilbeschribung	TRANSISTOR (NPN)

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TRANSISTOR (NPN)

FEATURES

High DC Current gain.

Complimentary to 2SB624

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

700

mA

PC

Collector Power Dissipation

200

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=30V , IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

μA

hFE(1)*

VCE= 1V, IC= 100mA

110

400

DC current gain

hFE(2)*

VCE=1V, IC= 700mA

50

Collector-emitter saturation voltage

VCE(sat) *

IC=700mA, IB=70mA

0.6

V

Base-emitter voltage

VBE *

VCE=6V, IC=10mA

0.6

0.7

V

Transition frequency

fT

VCE=6V, IC= 10mA

170

MHz

Collector Output Capacitance

Cob

VCB=6V,IE=0,f=10MHZ

12

pF

* Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.

CLASSIFICATION OF hFE(1)

Marking

DV1

DV2

DV3

DV4

DV5

Range

110-180

135-220

170-270

200-320

250-400

SOT-23

1.BASE

2.EMITTER

3.COLLECTOR

2SD596

１　

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