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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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3DD13005 Datenblatt(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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3DD13005 Datenblatt(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  3DD13005 4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 2-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 700 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 9 V Collector Current - Continuous IC 4 A Collector Power Dissipation PC 2 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 700 - - V IC=1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 400 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 9 - - V IE=1mA, IC=0 Collector Cut – Off Current ICBO - - 1 mA VCB=700V, IE=0 ICEO - - 0.1 VCE=400V, IB=0 Emitter Cut – Off Current IEBO - - 0.05 mA VEB=7V, IC=0 DC Current Gain hFE 20 - 30 VCE=5V, IC=1A 5 - - VCE=5V, IC=10mA Collector to Emitter Saturation Voltage VCE(sat)1 - - 0.3 V IC=1A, IB=0.2A VCE(sat)2 - - 0.8 V IC=4A, IB=1A Base to Emitter Saturation Voltage VBE(sat) - - 1.6 V IC=2A, IB=0.5A Transition Frequency fT 5 - - MHz VCE=10V, IC=500mA, f =1MHz Fall time tF - - 0.6 µ s IB1= -IB2=0.4A, IC=2A, VCC=120V Storage time tS 1.8 - 6.6 µ s IC=0.25A TO-220J |
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Ähnliche Beschreibung - 3DD13005 |
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