LS4154 datasheet(2/4 Pages) VISHAY

2 / 4 page

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Document Number 85564

Rev. 1.7, 15-Sep-10

LS4154

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

IF = 30 mA

1000

Reverse voltage

VR = 25 V

100

VR = 25 V, Tj = 150 °C

100

μA

Breakdown voltage

IR = 5 μA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

Diode capacitance

VR = 0, f = 1 MHz,

VHF = 50 mV

4pF

Reverse recovery time

IF = IR = 10 mA, iR = 1 mA

trr

4ns

IF = 10 mA, VR = 6 V,

iR = 0.1 x IR, RL = 100 Ω

trr

2ns

Figure 1. Reverse Current vs. Junction Temperature

Figure 2. Forward Current vs. Forward Voltage

040

120

160

0.01

0.1

100

Tj - Junction Temperature (°C)

200

94 9154

R = 25 V

Scattering Limit

00.4

0.8

1.2

1.6

0.1

100

1000

V - Forward Voltage (V)

2.0

94 9152

T = 25 °C

T = 100 °C

Figure 3. Diode Capacitance vs. Reverse Voltage

0.1

0.5

1.0

1.5

2.0

3.0

VR - Reverse Voltage (V)

100

94 9156

2.5

f = 1 MHz

j = 25 °C

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