BSP297 datasheet(2/9 Pages) SIEMENS

Teilenummer	BSP297

Bauteilbeschribung	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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Hersteller	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

Sep-12-1996

BSP 297

Maximum Ratings

Parameter

Symbol

Values

Unit

Chip or operating temperature

-55 ... + 150

°C

Storage temperature

Tstg

-55 ... + 150

Thermal resistance, chip to ambient air

RthJA

≤ 70

K/W

Therminal resistance, junction-soldering point 1)

RthJS

≤ 10

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at

Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

V(BR)DSS

200

Gate threshold voltage

VGS=VDS, ID = 1 mA

VGS(th)

0.8

1.4

Zero gate voltage drain current

VDS = 200 V, VGS = 0 V, Tj = 25 °C

VDS = 200 V, VGS = 0 V, Tj = 125 °C

VDS = 130 V, VGS = 0 V, Tj = 25 °C

IDSS

0.1

100

µA

Gate-source leakage current

VGS = 20 V, VDS = 0 V

IGSS

100

Drain-Source on-state resistance

VGS = 10 V, ID = 0.65 A

VGS = 4.5 V, ID = 0.65 A

RDS(on)

1.6

3.3

Ω

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