TIP36C datasheet(1/1 Pages) TGS

Teilenummer	TIP36C

Bauteilbeschribung	Complementary Silicon High Power Ttransistors

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Hersteller	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

100

V

Collector-Emitter Voltage

V

CEO

100

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current

I

C

25

A

Base Current

I

B

5

A

Total Dissipation at

P

tot

125

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

TIP35C / TIP36C

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

ICEO

V

CB=60V, IE=0

1.0

mA

Emitter Cut-off Current

IEBO

V

EB=5V, IC=0

1.0

mA

Collector-Emitter Sustaining Voltage

VCEO

I

C=30mA, IB=0

100

V

DC Current Gain

hFE(1)

V

CE=4V, IC=1.5A

25

hFE(2)

V

CE=4V, IC=15A

10

60

Collector-Emitter Saturation Voltage

VCE(sat) I

C=25A,IB=5A

4.0

V

Base-Emitter Voltage

VBE

V

CE=4V,IC=15A

2.0

V

Transition Frequency

fT

V

CE=5V,IC=1A

3

MHz

Complementary Silicon High Power Ttransistors

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS

TO-3PN

( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD

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