BTS130 datasheet(3/9 Pages) SIEMENS

Teilenummer	BTS130

Bauteilbeschribung	TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

PDF	9 Pages

Scroll/Zoom	100%

Hersteller	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

Logo

3 / 9 page

Semiconductor Group

Electrical Characteristics (cont’d)

j = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Continuous source current

–

Pulsed source current

–

108

Diode forward on-voltage

F = 54 A, VGS = 0

–

1.5

2.0

Reverse recovery time

F = IS, diF/dt = 100 A/µs, VR = 30 V

–

150

–

Reverse recovery charge

F = IS, diF/dt = 100 A/µs, VR = 30 V

–

1.0

–

µC

Temperature Sensor

Forward voltage

TS(on) = 10 mA, Tj = – 55 ... + 150 ° C

Sensor override,

p ≤ 100 µs

j = – 55 ... + 160 °C

TS(on)

–

1.4

–

1.5

Forward current

j = – 55 ... + 150 °C

Sensor override,

p ≤ 100 µs

j = – 55 ... + 160 °C

TS(on)

–

600

Holding current,

TS(off) = 5 V,

j = 25 °C

j = 150 °C

0.05

0.1

0.2

0.5

0.3

Switching temperature

TS = 5 V

TS(on)

150

–

°C

Turn-off time

TS = 5 V, ITS(on) = 2 mA

off

0.5

–

2.5

µs

BTS 130

BTS130 Datenblatt(PDF) 3 Page - Siemens Semiconductor Group

BTS130 Datenblatt(HTML) 3 Page - Siemens Semiconductor Group

Html Pages

1 2 3 4 5 6 7 8 9

Datenblatt Download

Link URL