CMLDM7005

SURFACE MOUNT

DUAL N-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFETS

SOT-563 CASE - MECHANICAL OUTLINE

ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Qg(tot)

VDS=10V, VGS=4.5V, ID=500mA

1.58

nC

Qgs

VDS=10V, VGS=4.5V, ID=500mA

0.17

nC

Qgd

VDS=10V, VGS=4.5V, ID=500mA

0.24

nC

gFS

VDS=10V, ID=400mA

1.0

S

Crss

VDS=16V, VGS=0, f=1.0MHz

18

pF

Ciss

VDS=16V, VGS=0, f=1.0MHz

100

pF

Coss

VDS=16V, VGS=0, f=1.0MHz

16

pF

ton

VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω

10

ns

toff

VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω

25

ns

PIN CONFIGURATION

LEAD CODE:

1) Source Q1

2) Gate Q1

3) Drain Q2

4) Source Q2

5) Gate Q2

6) Drain Q1

MARKING CODE: CC7

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R1 (27-September 2011)