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SBP1710-R Datenblatt(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Teilenummer SBP1710-R
Bauteilbeschribung  High Voltage Fast-Switching NPN Power Transistor
PDF  6 Pages
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Hersteller  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SBP1710-R Datenblatt(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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SB
SB
SB
SBP1710-R
P1710-R
P1710-R
P1710-R
Rev.A01 Jun.2011
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
High Voltage Fast-Switching NPN Power Transistor
Features
■ Very high switching speed
■ High Voltage Capability
■ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching
characteristics required such as
lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
Parameter
Test Conditions
Value
Units
VCBO
Collect-Emitter Voltage
VBE=0
900
V
VCEO
Collector-Emitter Voltage
IB=0
500
V
VEBO
Emitter-Base Voltage
IC=0
7
V
IC
Collector Current
7
A
ICP
Collector pulse Current
(Note)
14
A
PC
Total Dissipation at Tc=25℃
45
W
TJ
Operation Junction Temperature
150
℃
TSTG
Storage Temperature
-55~150
℃
T111-3


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