WTPB4A60SW datasheet(2/5 Pages) WINSEMI

Teilenummer	WTPB4A60SW

Bauteilbeschribung	Bi-Directional Triode Thyristor

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Hersteller	WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]

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2 / 5 page

WTPB4A60SW

2 /5

Symbol

Characteristics

Min

Typ.

Max

Unit

IDRM/IRRM

off-state leakage current

(VAK= VDRM/VRRM Single phase, half wave)

TJ=25

℃

μA

TJ=125

℃

VTM

Forward “On” voltage (IT=5A, Inst. Measurement)

1.2

1.6

IGT

Gate trigger current (continuous dc)

(VAK = 6 Vdc, RL = 10 Ω)

Note:1

T2+,G+

T2+,G-

T2-,G-

VGT

Gate Trigger Voltage (Continuous dc)

)

(VAK = 6 Vdc, RL = 10 Ω)

Note:1

T2+,G+

1.5

T2+,G-

1.5

T2-,G-

1.5

VGD

Gate threshold Voltage

ＶＤ=1/2V

DRM, RL = 3.3K Ω

TJ=125℃

0.2

dv/dt

Critical Rate of Rise of Off-State Voltage at

Commutation

(VD=0.67VDRM ;gate open)

Note:2

TJ=125℃

V/μs

Holding Current

latching current

Steady,

Steady, keep

keep

keep you

you

you advance

advance

Electrical Characteristics (T

C=25℃ unless otherwise noted)

Note

1: minimum IGT is guaranted at 5% of IGT max.

2: for both polarities of A2 referenced to A1.

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