2SA1700L-X-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SA1700

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R213-011.B

ABSOLUTE MAXIMUM RATING ( TA=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-400

Collector-Emitter Voltage

VCEO

-400

Emitter-Base Voltage

VEBO

-5

Collector Current

-200

Collector Current (PULSE)

ICP

-400

Power Dissipation

10 (TC=25℃)

Junction Temperature

150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC= -10μA, IE=0

-400

Collector-Emitter Breakdown Voltage

BVCEO

IC= -1mA, IB=0, RBE=∞

-400

Emitter-Base Breakdown Voltage

BVEBO

IE= -10μA, IC=0

-5

Collector Cutoff Current

ICBO

VCB= -300V, IE=0

-0.1

μA

Emitter Cutoff Current

IEBO

VEB= -4V, IC=0

-0.1

μA

DC Current Transfer Ratio

hFE

VCE= -10V, IC= -50mA

200

Collector-Emitter Saturation Voltage

VCE(SAT) IC= -50mA, IB= -5mA

-0.8

Base-Emitter Saturation Voltage

VBE(SAT) IC= -50mA, IB= -5mA

-1.0

Output Capacitance

COB

VCB= -30V, f=1MHz

Reverse Transfer Capacitance

CRE

VCB= -30V, f=1MHz

Gain-Bandwidth Product

VCE= -30V, IC= -10mA

MHz

Turn-on Time

tON

See test circuit

0.25

μs

Turn-off Time

tOFF

See test circuit

μs

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