2SC4774

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R220-017,B

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

12

V

Collector-Emitter Voltage

6

V

Emitter-Base Voltage

3

V

Collector Current

50

mA

Collector Power Dissipation

0.2

W

Junction Temperature

+150

°C

Storage Temperature

-40 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

12

V

Collector-Emitter Breakdown Voltage

6

V

Emitter-Base Breakdown Voltage

3

V

Collector-Emitter Saturation Voltage

0.3

V

Collector Cutoff Current

0.5

μA

Emitter Cutoff Current

0.5

μA

DC Current Transfer Ratio

270

560

Transition Frequency

300

800

MHz

Output Capacitance

1

1.7

pF

Output-On Resistance

2

Ω