Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

2SD1802L-X-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SD1802L-X-TN3-R
Bauteilbeschribung  HIGH CURRENT SWITCHING APPLICATION
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1802L-X-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

  2SD1802L-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SD1802L-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SD1802L-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
2SD1802
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R209-001.Ba
ABSOLUTE MAXIMUM RATING ( TA= 25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Power Dissipation
Pc
1
W
TC=25℃
15
Collector Current (DC)
IC
3
A
Collector Current (PULSE)
ICP
6
A
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cutoff Current
ICBO
VCB=40V, IE =0
1
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1
μA
DC Current Gain (note)
hFE1
VCE=2V, IC=100mA
100
560
hFE2
VCE=2V, IC=3A
35
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
150
MHz
Output Capacitance
COB
VCB=10V, f=1MHz
25
pF
C-E Saturation Voltage
VCE(SAT)
IC= 2A, IB=100mA
0.19
0.5
V
B-E Saturation Voltage
VBE(SAT)
IC= 2A, IB=100mA
0.94
1.2
V
C-B Breakdown Voltage
V(BR)CBO
IC= 10μA, IE=0
60
V
C-E Breakdown Voltage
V(BR)CEO
IC= 1mA, RBE=∞
50
V
E-B Breakdown Voltage
V(BR)EBO
IE= 10μA, IC=0
6
V
Turn-on Time
tON
See test circuit
70
ns
Storage Time
tSTG
See test circuit
650
ns
Fall Time
tF
See test circuit
35
ns
CLASSIFICATION OF hFE1
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560



Html Pages

1 2 3


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com