M28S

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-015,Ca

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

40

V

Collector-emitter Voltage

20

V

Emitter-Base Voltage

6

V

Collector Current

1.25

A

Base Current

0.4

mA

Power Dissipation

850

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

20

V

Emitter-Base Voltage

6

V

Collector Cutoff Current

100

nA

Emitter Cutoff Current

100

nA

ON CHARACTERISTICS

290

300

1000

300

DC Current Gain (Note)

300

Collector-Emitter Saturation Voltage

0.55

V

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

100

MHz

Output Capacitance

9

pF

RANK

B

C

D

RANGE

300-550

500-700

650-1000

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.