MMBTA42L-AE3-R datasheet(2/4 Pages) UTC

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MMBTA42

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-004,E

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

300

Collector-Emitter Voltage

VCEO

300

Emitter-Base Voltage

VEBO

Collector Dissipation (Ta=25°C)

350

Collector Current

500

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied

ELECTRICAL CHARACTERISTICS (T

J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=100μA, IE=0

300

Collector-Emitter Breakdown Voltage

BVCEO

IC =1mA, IB=0

300

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC =0

Collector-Emitter Saturation Voltage

VCE(SAT)

IC =20mA, IB=2mA

0.2

Base-Emitter Saturation Voltage

VBE(SAT)

IC =20mA, IB=2mA

0.90

Collector Cut-Off Current

ICBO

VCB=200V, IE=0

100

Emitter Cut-Off Current

IEBO

VBE=6V, IC =0

100

VCE=10V, IC =1mA

VCE=10V, IC =10mA

300

DC Current Gain

hFE

VCE=10V, IC =30mA

Current Gain Bandwidth Product

VCE=20V, IC=10mA, f=100MHz

MHz

Collector Base Capacitance

Ccb

VCB=20V, IE=0, f=1MHz

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