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12N06G-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 12N06G-TN3-R
Bauteilbeschribung  12 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  5 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

12N06G-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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12N06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-561.a
ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
60
V
Drain-Gate Voltage (RGS=20KΩ))
VDGR
60
V
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
12
A
Continuous
TC = 100°C
ID
8.5
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Power Dissipation
PD
30
W
Derating Factor
0.2
W/°C
Peak Diode Recovery dv/dt (Note 3)
dv/dt
15
V/ns
Avalanche Energy (Note 4)
EAS
100
mJ
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDS ≤ 40V, TJ ≤ TJMAX
4. Starting TJ = 25°C, ID = 6A, VDD = 30V
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
5
°C/W



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