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ULN2003L-S16-R Datenblatt(PDF) 6 Page - Unisonic Technologies

Teilenummer ULN2003L-S16-R
Bauteilbeschribung  7CH DARLINGTON SINK DRIVER
PDF  10 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

ULN2003L-S16-R Datenblatt(HTML) 6 Page - Unisonic Technologies

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ULN2003
LINEAR INTEGRATED CIRCUIT
UNISONICTECHNOLOGIESCO.,LTD
6 of 10
www.unisonic.com.tw
QW-R113-001.J
APPLICATION NOTES
This UTC ULN2003 does not include built-in protection circuits for over-current or over-voltage. If this IC is
subjected to over-current or over-voltage, it may be destroyed. Hence, the utmost care must be taken when systems
which incorporate this IC are designed. Utmost care is necessary in the design of the output line, COMMON and
GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by
improper grounding.
The UTC ULN2003 is a darlington driver array, and can be directly coupled to a general logic circuit such as TTL
or CMOS. Resistors are connected in series to each of the inputs to achieve a stable input current.
The load should be connected between the output and the power supply. To protect the IC from excessive swing
voltage, the COMMON pin (Pin 9) should be connected to the power supply.
The UTC ULN2003 can absorb the surge current because of the on-chip diode. The bottom Figure shows the
configuration of the on-chip diode.
In the construction of the surge-absorbing diode, there is parasitic PNP, output pin for emitter, COMMON pin for
base and the substrate (P-sub) for collector. When the diode is on, current flows from the output pin to the substrate.
When using the surge-absorbing diode, appropriate measures should be taken for the thermal characteristics of the
design considering the current. For example, when motor back-rush current or other conditions that can create
continued surge current flow to the surge-absorbing diode, we strongly recommend connecting a Schottky barrier
diode (or other type of diode with a low forward voltage) in parallel with the surge-absorbing diode to construct a
bypass route for the surge current.



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