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UP1851G-AA3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer UP1851G-AA3-R
Bauteilbeschribung  HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
PDF  4 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP1851G-AA3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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UP1851
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R207-018.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-15
A
Continuous Collector Current
IC
-5
A
Power Dissipation (TA=25°C)
PD
3
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μ A
-100
-140
V
Collector-Emitter Breakdown Voltage
BVCER
IC=-1μA, RB≦1KΩ
-100
-140
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-10mA (Note)
-60
-90
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA
-6
-8
V
Collector Cut-Off Current
ICBO
VCB=-80V
-150
nA
Collector Cut-Off Current
ICER
VCB=-80V, R≤1kΩ
-150
nA
Emitter Cut-Off Current
IEBO
VEB=-6V
-50
nA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=-100mA, IB=-10mA
-20
-50
mV
IC=-1A, IB=-100mA
-85
-140
IC=-2A, IB=-200mA
-155
-210
IC=-5A, IB=-500mA
-370
-460
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-5A, IB=-500mA (Note)
-1080 -1240
mV
Base-Emitter Turn-On Voltage
VBE(ON)
IC=-5A, VCE=-1V (Note)
-935 -1070
mV
DC Current Gain (Note)
hFE
IC=-10mA, VCE=-1V
100
200
IC=-2A, VCE=-1V
100
200
300
IC=-5A, VCE=-1V
75
90
IC=-10A, VCE=-1V
10
25
Transition Frequency
fT
IC=-100mA, VCE=-10V, f=50MHz
120
MHz
Output Capacitance
COBO
VCB=-10V, f=1MHz
74
pF
Switching Times
tON
IC=-2A, IB1=-200mA
82
ns
tOFF
IB2=200mA, VCC=-10V
350
Note: Pulse width=300μs. Duty cycle≤2%



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