UT12N10G-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

UT12N10

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-508.b

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous

Drain Current

Pulsed (Note 1)

IDM

Power Dissipation

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note:

Note:1

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

θJA

°C/W

Junction to Case

θJC

3.5

°C/W

Note:

Note:2

θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal

reference is defined as the solder mounting surface of the drain pins.

θJC is guaranteed by design while θJA is determined by the user’s board design.

When mounted on a 1 in

2 pad of 2 oz copper

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