Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

UT2301ZL-AE3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer UT2301ZL-AE3-R
Bauteilbeschribung  2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2301ZL-AE3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

  UT2301ZL-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2301ZL-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2301ZL-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2301ZL-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
UT2301Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-281.G
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current
ID
-2.8
A
Pulsed Drain Current (Note 2, 3)
IDM
-10
A
Total Power Dissipation
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
Note:
3. Pulse width ≤300µs, duty cycle ≤2%
THERMAL DATA (Note)
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
100
°C/W
Note: Surface mounted on FR4 board t ≤ 5%sec.
ELECTRICAL CHARACTERISTICS (ID=-2.3A , TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V, VGS=0V
-1.0
μA
Gate-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±5
μA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.45
V
VGS=-4.5V, ID=-2.8A
95
130
mΩ
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V, ID=-2.0A
122
190
mΩ
On-State Drain Current
ID(ON)
VDS=-5 V, VGS=-10V
-6
A
Forward Tran conductance
gFS
VDS=-5 V, ID=-2.8A
6.5
S
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
447
pF
Output Capacitance
COSS
127
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-6V, f=1.0MHz
80
pF
SWITCHING CHARACTERISTICS
Total Gate Charge (Note)
QG
5.4
10
nC
Gate-Source Charge
QGS
0.8
nC
Gate-Drain Charge
QGD
VDS=-6V, VGS=-4.5V,
ID=-2.8A
1.1
nC
Turn-ON Delay Time (Note)
tD(ON)
5
25
ns
Turn-ON Rise Time
tR
19
60
ns
Turn-OFF Delay Time
tD(OFF)
95
110
ns
Turn-OFF Fall Time
tF
VDD=-6V, VGEN=-4.5V,
ID=-1A, RG=6Ω, RL=6Ω
65
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage (Note)
VSD
IS=-1.6 A, VGS=0 V
-0.8
-1.2
V
Maximum Diode Forward Current
IS
-1.6
A
Note: Pulse width ≤300µs, Duty Cycle ≤2%



Html Pages

1 2 3 4


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com