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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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UT2321L-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT2321L-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page  UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-249.D P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<55mΩ @VGS=-4.5V * RDS(ON)<80mΩ @VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT2321L-AE3-R UT2321G-AE3-R SOT-23 S G D Tape Reel MARKING 231 L: Lead Free G: Halogen Free |
Ähnliche Teilenummer - UT2321L-AE3-R |
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Ähnliche Beschreibung - UT2321L-AE3-R |
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