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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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UT3419G-AE3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT3419G-AE3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT3419 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-391.C 20V, 3.5A P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC UT3419 is a P-channel enhancement MOSFET providing designers with excellent RDS(ON), low gate charge. The gate voltage is as low as 2.5V. It is ESD protection. The UTC UT3419 can be applied in PWM applications or used as a load switch. FEATURES * ESD Rating Is Up To 2000V HBM * RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UT3419L-AE3-R UT3419G-AE3-R SOT-23 S G D Tape Reel MARKING 34V G: Halogen Free L: Lead Free |
Ähnliche Teilenummer - UT3419G-AE3-R |
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Ähnliche Beschreibung - UT3419G-AE3-R |
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