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UT4430G-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT4430G-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4430 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-333.A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4430 uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side DC/DC conversion, notebook and sever. FEATURES * VDS(V)=30V * ID=18A (VGS = 10V) * RDS(ON)<5.5mΩ@VGS=10V * RDS(ON)<7.5mΩ@VGS=4.5V * Halogen-Free SYMBOL Source Gate Drain ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Packing UT4430L-S08-R UT4430G-S08-R SOP-8 Tape Reel |
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