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UT4446L-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT4446L-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4446 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-251.A N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4446 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)< 8.5mΩ @VGS=10V * RDS(ON)< 14.5mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain SOP-8 Lead-free: UT4446L Halogen-free: UT4446G ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free Package Packing UT4446-S08-R UT4446L-S08-R UT4446G-S08-R SOP-8 Tape Reel UT4446-S08-T UT4446L-S08-T UT4446G-S08-T SOP-8 Tube |
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