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UT4957G-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UT4957G-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4957 Power MOSFET www.unisonic.com.tw 1 of 4 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-279.A P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UT4957 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<24mΩ @VGS=-10V * RDS(ON)<36mΩ @VGS=4.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL (7) (8) D1 (4) G2 (2) G1 S1 (1) S2 (3) (5) (6) D2 Lead-free: UT4957L Halogen-free: UT4957G ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free Package Packing UT4957-S08-R UT4957L-S08-R UT4957G-S08-R SOP-8 Tape Reel UT4957-S08-T UT4957L-S08-T UT4957G-S08-T SOP-8 Tube |
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