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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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UTD436-TN3-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UTD436-TN3-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UTD436 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-258.a N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD436 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<7.5mΩ @VGS=10V, ID =20A * RDS(ON)<13mΩ @VGS=4.5V, ID =20A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain Lead-free: UTD436L Halogen-free: UTD436G ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Halogen Free Package 1 2 3 Packing UTD436-TN3-R UTD436L-TN3-R UTD436G-TN3-R TO-252 G D S Tape Reel UTD436-TN3-T UTD436L-TN3-T UTD436G-TN3-T TO-252 G D S Tube |
Ähnliche Teilenummer - UTD436-TN3-R |
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Ähnliche Beschreibung - UTD436-TN3-R |
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