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UTD484 Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UTD484 Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R502-207.A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 15mΩ @VGS = 10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: UTD484L ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing UTD484-TN3-R UTD484L-TN3-R TO-252 G D S Tape Reel UTD484-TN3-T UTD484L-TN3-T TO-252 G D S Tube |
Ähnliche Teilenummer - UTD484 |
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Ähnliche Beschreibung - UTD484 |
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