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FR4 Datenblatt(PDF) 3 Page - Freescale Semiconductor, Inc |
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FR4 Datenblatt(HTML) 3 Page - Freescale Semiconductor, Inc |
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3 / 27 page ![]() AFT05MS031NR1 AFT05MS031GNR1 3 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Dynamic Characteristics Reverse Transfer Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc) Coss — 49.5 — pF Input Capacitance (VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 109 — pF Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ =10 mA, Pout = 31W,f= 520 MHz Common--Source Amplifier Power Gain Gps 16.5 17.7 19.0 dB Drain Efficiency ηD 70.0 71.4 — % Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ =10 mA) Frequency (MHz) Signal Type VSWR Pout (W) Test Voltage, VDD Result 520 CW >65:1 at all Phase Angles 47 (3 dB Overdrive) 17 No Device Degradation 1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. |
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