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SST30VR043 Datenblatt(PDF) 7 Page - Silicon Storage Technology, Inc |
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SST30VR043 Datenblatt(HTML) 7 Page - Silicon Storage Technology, Inc |
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7 / 10 page ![]() Preliminary Specifications 4 Mbit ROM + 1 Mbit / 256 Kbit SRAM ROM/RAM Combo SST30VR041 / SST30VR043 7 ©2001 Silicon Storage Technology, Inc. S71134-02-000 4/01 381 FIGURE 6: SRAM READ CYCLE TIMING DIAGRAM (ADDRESS CONTROLLED) (OE#/RAMCS# = VIL, WE# = VIH) FIGURE 7: SRAM READ CYCLE TIMING DIAGRAM (OE#/RAMCS# CONTROLLED) TRC TAA Data Valid 381 ILL F04.0 Data Out Previous Data Valid Address TOH TRC TAA TCO TLZ(2) TOH THZ(1,2) Data Valid 381 ILL F05.0 Data Out OE#/RAMCS# High-Z Address Notes: 1. THZ and TOHZ are defined as the time at which the outputs achieve the open circuit condition and are referenced to the VOH or VOL. 2. At any given temperature and voltage condition THZ(max) is less than TLZ(min) both for a given device and from device to device. 3. WE# is high for Read cycle. |
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