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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SST39LF080 Datenblatt(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST39LF080 Datenblatt(HTML) 11 Page - Silicon Storage Technology, Inc |
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11 / 26 page  Data Sheet 8 Mbit / 16 Mbit Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 11 ©2001 Silicon Storage Technology, Inc. S71146-03-000 6/01 396 TABLE 9: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF080/016 AND 2.7-3.6V FOR SST39VF080/016 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VIL/VIH, at f=1/TRC Min VDD=VDD Max Read 15 mA CE#=OE#=VIL, WE#=VIH, all I/Os open Program and Erase 20 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 20 µA CE#=VIHC, VDD=VDD Max IALP Auto Low Power 20 µA CE#=VILC, VDD=VDD Max All inputs=VIHC or VILC WE#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T9.2 396 TABLE 10: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T10.1 396 TABLE 11: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T11.0 396 TABLE 12: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T12.1 396 |
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