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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC6000 Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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2SC6000 Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  2SC6000 2006-11-13 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 120 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 1 mA 160 ― ― DC current gain hFE (2) VCE = 2 V, IC = 2.5 A 250 ― 400 Collector emitter saturation voltage VCE (sat) IC = 2.5 A, IB = 83 mA ― ― 0.18 V Base-emitter saturation voltage VBE (sat) IC = 2.5 A, IB = 83 mA ― ― 1.10 V Rise time tr ― 45 ― Storage time tstg ― 450 ― Switching time Fall time tf See Figure 1 circuit diagram VCC ∼− 20 V, RL = 8.0 Ω IB1 = 83 mA, IB2 = −166 mA ― 13 ― ns Figure 1 Switching Time Test Circuit & Timing Chart Marking IB1 20μs IB2 IB1 IB2 Input Output VCC Duty cycle ＜ 1% C6000 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
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