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STPS40M100C Datenblatt(PDF) 4 Page - STMicroelectronics |
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STPS40M100C Datenblatt(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STPS40M100C 4/8 Doc ID 15522 Rev 3 Figure 8. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 10. Forward voltage drop versus forward current (per diode) Figure 11. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) IR(mA) 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 10 203040 5060 708090 100 T j=125 °C T j=100 °C T j=75 °C T j=50 °C T j=25 °C T j=150 °C VR(V) C(pF) 100 1000 10000 110 100 F=1 MHz V osc=30 mVRMS T j=25 °C VR(V) IFM(A) 0 5 10 15 20 25 30 35 40 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 T j=25 °C (Maximum values) T j=125 °C (Maximum values) T j=125 °C (Maximum values) T j=125 °C (Typical values) T j=125 °C (Typical values) V (V) FM Iarm (A) 45 50 55 60 65 70 100 110 120 130 140 150 Operating area Forbidden area Varm (V) |
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