Description

The CXK77B3610GB-6/7 is a high speed 1M bit

Bi-CMOS synchronous statis RAM organized as

32768 words by 36 bits. This SRAM integrates input

registers, high speed SRAM and write buffer onto a

single monolithic IC and features the delayed write

system to reduce the dead cycles.

Features

• Fast cycle time

(Cycle)

(Frequency)

CXK77B3610GB-6

6ns

166MHz

CXK77B3610GB-7

7ns

142MHz

• Inputs and outputs are LVTTL/LVCMOS compatible

• Single 3.3V power supply: 3.3V ± 0.15V

• Byte-write possible

• OE asynchronization

• JTAG test circuit

• Package 119TBGA

• 3 kinds of synchronous operation mode

Register-Register mode (R-R mode)

Register-Flow Thru mode (R-F mode)

Register-Latch mode (R-L mode)

Function

32768 word

× 36bit High Speed Bi-CMOS Synchronous SRAM

Structure

Silicon gate Bi-CMOS IC

– 1 –

PE95128-PS

High Speed Bi-CMOS Synchronous Static RAM

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any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

119 pin BGA (Plastic)

Preliminary

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