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2N60ZLG-TN3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2N60ZLG-TN3-R
Bauteilbeschribung  2A, 600V N-CHANNEL POWER MOSFET
PDF  6 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2N60ZLG-TN3-R Datenblatt(HTML) 2 Page - Unisonic Technologies

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2N60ZL
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-830.A
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±20
V
Avalanche Current (Note 2)
IAR
2.0
A
Drain Current
Continuous
ID
2.0
A
Pulsed (Note 2)
IDM
8.0
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
140
mJ
Repetitive (Note 2)
EAR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-251/TO-252
PD
44
W
Junction Temperature
TJ
+150
°С
Ambient Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
TO-251/TO-252
θJA
100
°С/W
Junction to Case
TO-251/TO-252
θJc
2.87
°С/W



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