SS256

CMOS Omnipolar High Sensitivity Micropower Hall Switch

Packages

Features and Benefits

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Operation down to 2.5V

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Micropower consumption for battery

powered applications

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High sensitivity for direct reed switch

replacement applications

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Omnipolar, output switches with absolute

value of North or South pole from magnet

3 pin SOT23 (suffix SO)

3 pin SIP (suffix UA)

 

Functional Block Diagram

Application Examples

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Solid-state switch

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Handheld Wireless Handset Awake Switch

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Lid close sensor for battery powered devices

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Magnet proximity sensor for reed switch

replacement in low duty cycle applications

 

General Description:

The SS256 Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates

advanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and

analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a

“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall

then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is

latched in its previous state. The design has been optimized for service in applications requiring extended operating

lifetime in battery powered systems.

magnetic field.

1

V2.10

May 1, 2012