THC7984_Rev.1.00_E

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THine Electronics, Inc.

Copyright©2009 THine Electronics, Inc.

Specifications

V D =1.8V , V D D =3.3V , P V D =1.8 V , D A V D D =1.8V , A D C C lo c k = M a x im u m C o nv ers ion R ate, F ull T e m p erature R a ng e=0° C to 70° C

A n alo g Input V o lta ge=0 .5 to 1.0V pp

Min

T y p

M a x

N u m b e r o f B its

10

B its

LS B Siz e

0.098

%F S

25° C

I

± 0 .7 5

± 1

L S B

F u ll

V I

-1.0/+1.25

L S B

2 5 ° C

I

±1 .5

±3

L S B

Fu ll

V I

± 4

LS B

N o M is s in g C o d e

25° C

I

G uara nteed

M inim u m In put V o ltage

F ull

V I

0 .5

V p-p

M a xim u m In put V o lta g e

F ull

V I

1 .0

V p-p

G a in T em pco

25° C

V

100

ppm /° C

25° C

IV

1

µA

Fu ll

IV

1

µ A

In p u t O ffs e t V o lta ge

F u ll

V I

± 1

L S B

In p u t F u ll- S c ale M a tching

B e tw een C h annels

Fu ll

V I

0 .2

0 .8

%

O ffset A djustm en t R a n ge

F u ll

V I

50

%F S

M a x im u m C o nv e rs io n R a te

F ull

V I

1 70

M S P S

M inim u m C o nvers io n R ate

F ull

IV

1 0

M S P S

Da ta S e tu p T im e to C lo ck

* 2

F u ll

IV

0.4 8 T p ix el-2.1

n s

D a ta H old T im e to C lo c k

* 2

F u ll

IV

0.4 8 T p ix el-0.4

n s

Du ty C y cle, D A T A C K

* 2

F u ll

IV

40

50

60

%

H S Y N C In put F requ ency

F u ll

IV

15

110

kH z

Ma x im u m P L L C lo c k R a te

F u ll

V I

1 7 0

M H z

M in imu m P L L C lo c k R a te

F u ll

IV

1 0

M H z

PL L J itte r

* 3

25° C

V

500

ps p -p

S a m p lin g P h as e T e m p co

F u ll

IV

15

ps/° C

S C L C lock F requency ( fS C L )

F u ll

IV

1 0 0

kH z

tB U F F

F u ll

IV

4 .7

µ s

tS T A H

F u ll

IV

4 .0

µ s

tD H O

F u ll

IV

0

3 .4 5

µ s

tD A L

F u ll

IV

4 .7

µ s

tD A H

F u ll

IV

4 .0

µ s

tD S U

F u ll

IV

2 5 0

n s

tS T A S U

F u ll

IV

4 .7

µ s

tS T O S U

F u ll

IV

4 .0

µ s

T r

F u ll

IV

1000

ns

T f

F u ll

IV

150

ns

C a p a c itiv e L o a d ( C b )

F u ll

IV

4 0 0

p F

N o ise m a rg in a t th e L O W le v e l ( V n L )

F u ll

IV

0 .2

V

N o is e m a rg in a t th e H IG H le v e l ( V n H )

F u ll

IV

0.25

V

In p u t V o lta g e , H ig h (V IH )

F u ll

V I

1 .4

V

In p u t V o lta g e , L o w (V IL )

F u ll

V I

0 .8

V

In put C u rrent, H ig h (IIH )

F ull

V

10

µA

In put C u rren t, L o w (IIL )

F ull

V

10

µA

In pu t C a pacita nce

25° C

V

2

p F

O u tp u t V o lta ge , H igh (VO H )

F u ll

VI

VD D - 0 .2

V

O u tp u t V o lta g e , L o w (V O L )

F u ll

V I

0 .2

V

Ou tp u t C o d in g

Bin a ry

V D S upp ly V o ltag e

F ull

IV

1 .7

1.8

1 .9

V

VDD S u p p ly Vo lta ge

F u ll

IV

2 .3

3 .3

3 .4 5

V

P V D S u p p ly V olta g e

F u ll

IV

1.7

1 .8

1.9

V

DA V D D S u p p ly V o lta ge

F u ll

IV

1 .7

1 .8

1 .9

V

ID S upply C u rrent (V D )

25° C

V

295

m A

ID D S u pp ly C urrent (V D D )

* 4

25° C

V

180

m A

IP V D S upply C u rrent (P V D )

25° C

V

30

m A

ID A V D D S upply C u rrent (D A V D D )

25° C

V

65

m A

T o ta l P o w e r D iss ip atio n

F ull

V I

1350

m W

P o w e r- D o w n S upply C u rrent

F u ll

V I

10

20

m A

P o we r- D o wn D is sip a tio n

F u ll

V I

20

40

m W

O p eratin g A m bient T em pera tu re

IV

0

7 0

° C

θ J C J unctio n-to- C a se

T herm a l R e sistance

25° C

V

4

° C / W

θ J A J unctio n-to - A m bient

T herm a l R e s is tance

25° C

V

37

° C /W

*1 In put B ias V o lta ge : 0.05V to V D -0.05V

*2 S ee "D ata/C lo c k O u tp ut T es t C o nditio n".

*3 T H C 7984-17: U X G A @ 60H z

*4 O u tp ut L o a d C a pacita nce per P in : 15p F

Te m p

In te gra l N o n lin e a rity

2-W IR E S E R IA L

IN T E R F A C E

D C A C C U R A C Y

D iffe rentia l N o nlinearity

RE S O L U T IO N

Pa ra m e te r

TH ER M A L

CHARACT E RIS T IC S

T H C 7984- 17

Un it

D IG ITA L IN P U TS

PO W E R S U PP L Y

ANA L O G INPUT

In put B ias C urrent

*1

D IG ITA L O U TP U T S

S W IT C H IN G

PE RF O R M A NCE

Te st

Le v e l

EXPLANATION OF TEST LEVELS

Test Level

I. 100% production tested.

II. 100% production tested at +25°C and sample tested at specified temperatures.

III. Sample tested only.

IV. Parameter is guaranteed by design and characterization testing.

V. Parameter is a typical value only.

VI. 100% production tested at +25°C; guaranteed by design and characterization testing.