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TIP110 Datenblatt(PDF) 2 Page - Comset Semiconductor |
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TIP110 Datenblatt(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN TIP110-111-112 05/10/2012 COMSET SEMICONDUCTORS 2 |3 SEMICONDUCTORS THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-case From junction-case TIP110 2.5 °C/W TIP111 TIP112 RthJ-amb From junction-ambient TIP110 62.5 °C/W TIP111 TIP112 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current IE= 0,VCB = VCBOmax TIP110 - - 1 mA TIP111 TIP112 ICEO Collector Cutoff Current IE= 0, VCE = 1/2 VCEOmax TIP110 - - 2 mA TIP111 TIP112 IEBO Emitter Cutoff Current VEB= 5 V, IC= 0 TIP110 - - 2 mA TIP111 TIP112 VCEO Collector-Emitter Breakdown Voltage (*) IC= 30 mA, IB= 0 TIP110 60 - - V TIP111 80 - - TIP112 100 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 2 A, IB= 8 mA TIP110 - - 2.5 V TIP111 TIP112 VBE(on) Base-Emitter Voltage (*) IC= 2 A, VCE= 4 V TIP110 - - 2.8 V TIP111 TIP112 hFE DC Current Gain (*) VCE= 4 V, IC= 1 A TIP110 1000 - - - TIP111 TIP112 VCE= 4 V, IC= 2 A TIP110 500 - - TIP111 TIP112 COB Output Capacitance IE= 0, VCB = 10 V f= 0.1MHz TIP110 - - 100 pF TIP111 TIP112 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
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