ACE5801 datasheet(2/5 Pages) ACE

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ACE5801

P-Channel Power MOSFET

VER 1.2

Ordering information

ACE5801 XX + H

Electrical Characteristics (TA=25 OC unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-12

Zero Gate Voltage Drain Current

IDSS

VDS=-12V, VGS=0V

-1

Gate-Body Leakage Current

IGSS

VGS=±8V, VDS=0V

±100

On characteristics (note 5)

Drain-Source On-state Resistance

RDS(ON)

VGS=-4.5V, ID=-6.7A

VGS=-2.5V, ID=-6.2A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

-0.7

-1

Forward Transconductance

gFS

VDS=-10V, ID=-6.7A

Dynamic characteristics (note 6)

Input Capacitance

Ciss

VDS=-10V, VGS=0V

f=1 MHz

2700

Output Capacitance

Coss

680

Reverse Transfer Capacitance

Crss

590

Total Gate Charge

VDS=-6V, VGS=-8V,

ID=-10A

100

VDS=-6V, VGS=-4.5V,

ID=-10A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Drain-source diode characteristics

Diode Forward Current (note 5)

-16

Diode Forward Voltage (note 4)

VSD

IS=-1.6A,VGS=0V

-0.5

-1.2

Note:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. This test is performed with no heat sink at Ta=25℃.

3. This test is performed with infinite heat sink at Tc=25℃.

4. Surface mounted on FR4 board, t

≤10S.

5. Pulse Test: Pulse With

≤300μs,Duty Cycle≤2%.

6. Guaranteed by design, not subject to production testing.

LN : DFNWB2*2-6L

Pb - free

Halogen - free

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