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ADG802 Datenblatt(PDF) 2 Page - Analog Devices |
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ADG802 Datenblatt(HTML) 2 Page - Analog Devices |
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2 / 9 page ![]() –2– REV. PrE ADG801/ADG802–SPECIFICATIONS1 PRELIMINARY TECHNICAL DATA (VDD = 5 V ±10%, VSS = GND = 0 V. All specifications –40°C to +125°C unless otherwise noted.) –40oC to –40oC to Parameter +25oC +85oC +125oC Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.25 Ω typ VS = 0 V to VDD, IS = –10 mA; 0.4 0.5 0.75 Ω max Test Circuit 1 On-Resistance Flatness (RFLAT(ON)) 0.05 Ω typ VS = 0 V to VDD, IS = –10 mA 0.1 0.2 Ω max LEAKAGE CURRENTS VDD = +5.5 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; ±0.5 ± 1 tbd nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 4.5 V/1 V, VD = 1 V/4.5 V; ±0.5 ± 1 tbd nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V, or 4.5 V; ±0.5 ± 1 tbd nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 5 pF typ DYNAMIC CHARACTERISTICS 2 t ON 30 ns typ RL = 50 Ω, C L = 35 pF TBD TBD ns max VS = 3 V; Test Circuit 4 tOFF 20 ns typ RL = 50 Ω, CL = 35 pF TBD TBD ns max VS = 3 V; Test Circuit 4 Charge Injection ±20 pC typ VS = 0 V, RS = 0 Ω, C L = 1 nF, Test Circuit 5 Off Isolation –65 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, Test Circuit 6 Bandwidth –3 dB 30 MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7 CS (OFF) 55 pF typ f = 1 MHz CD (OFF) 55 pF typ f = 1 MHz CD, CS (ON) 110 pF typ f = 1 MHz POWER REQUIREMENTS VDD = +5.5 V I DD 0.001 µA typ Digital Inputs = 0 V or 5.5 V 1.0 µA max NOTES 1Temperature ranges are as follows: Extended Temperature Range: – 40°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. |
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