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ADG802 Datenblatt(PDF) 2 Page - Analog Devices

Teilenummer ADG802
Bauteilbeschribung  <0.5 ohm CMOS, Low Voltage, SPST Switches
PDF  9 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
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ADG802 Datenblatt(HTML) 2 Page - Analog Devices

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–2–
REV. PrE
ADG801/ADG802–SPECIFICATIONS1
PRELIMINARY TECHNICAL DATA
(VDD = 5 V ±10%, VSS = GND = 0 V. All specifications –40°C to +125°C unless otherwise noted.)
–40oC to
–40oC to
Parameter
+25oC
+85oC
+125oC
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD V
On Resistance (RON)
0.25
Ω typ
VS = 0 V to VDD, IS = –10 mA;
0.4
0.5
0.75
Ω max
Test Circuit 1
On-Resistance Flatness (RFLAT(ON)) 0.05
Ω typ
VS = 0 V to VDD, IS = –10 mA
0.1
0.2
Ω max
LEAKAGE CURRENTS
VDD = +5.5 V
Source OFF Leakage IS (OFF)
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.5
± 1
tbd
nA max Test Circuit 2
Drain OFF Leakage ID (OFF)
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.5
± 1
tbd
nA max Test Circuit 2
Channel ON Leakage ID, IS (ON) ±0.01
nA typ
VS = VD = 1 V, or 4.5 V;
±0.5
± 1
tbd
nA max Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
2.4
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
µA typ
VIN = VINL or VINH
±0.1
µA max
CIN, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS
2
t ON
30
ns typ
RL = 50
Ω, C
L = 35 pF
TBD
TBD
ns max
VS = 3 V; Test Circuit 4
tOFF
20
ns typ
RL = 50 Ω, CL = 35 pF
TBD
TBD
ns max
VS = 3 V; Test Circuit 4
Charge Injection
±20
pC typ
VS = 0 V, RS = 0
Ω, C
L = 1 nF, Test
Circuit 5
Off Isolation
–65
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz,
Test Circuit 6
Bandwidth –3 dB
30
MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7
CS (OFF)
55
pF typ
f = 1 MHz
CD (OFF)
55
pF typ
f = 1 MHz
CD, CS (ON)
110
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = +5.5 V
I DD
0.001
µA typ
Digital Inputs = 0 V or 5.5 V
1.0
µA max
NOTES
1Temperature ranges are as follows: Extended Temperature Range: – 40°C to +125°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.



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