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ADP3415LRMZ-REEL Datenblatt(PDF) 2 Page - Analog Devices

Teilenummer ADP3415LRMZ-REEL
Bauteilbeschribung  Dual MOSFET Driver with Bootstrapping
PDF  12 Pages
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Hersteller  AD [Analog Devices]
Direct Link  http://www.analog.com
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ADP3415LRMZ-REEL Datenblatt(HTML) 2 Page - Analog Devices

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REV. B
–2–
ADP3415–SPECIFICATIONS1
(TA = 0 C to 100 C, VCC = 5 V, VBST – VSW = 5 V, SD = 5 V, CDRVH = CDRVL = 3 nF,
unless otherwise noted.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
SUPPLY (VCC)
Quiescent Current
2
ICCQ
Shutdown Mode
VSD = 0.8 V
30
65
µA
Operating Mode
VSD = 5 V, No Switching
1.2
2
mA
UNDERVOLTAGE LOCKOUT
(UVLO)
UVLO Threshold
VCCUVLO
3.9
4.15
4.5
V
UVLO Hysteresis
VCCHUVLO
0.05
V
LOW-SIDE DRIVER SHUTDOWN
(
DRVLSD)
Input Voltage High
3
VIH
2.0
V
Input Voltage Low3
VIL
0.8
V
Propagation Delay
3, 4
tpdlDRVLSD
20
50
ns
(See Figure 3)
tpdhDRVLSD
10
30
ns
SHUTDOWN (
SD)
Input Voltage High
3
VIH
2.0
V
Input Voltage Low3
VIL
0.8
V
INPUT (IN)
Input Voltage High
3
VIH
2.0
V
Input Voltage Low
3
VIL
0.8
V
THERMAL SHUTDOWN (THSD)
THSD Threshold
TSD
TJ = TA
165
°C
THSD Hysteresis
THSD
TJ = TA
10
°C
HIGH-SIDE DRIVER (DRVH)
Output Resistance, DRVH–BST
1.5
3.5
Output Resistance, DRVH–SW
0.85
2.0
DRVH Transition Times
4
trDRVH
VBST – VSW = 4.6 V
20
30
ns
(See Figure 4)
tfDRVH
25
35
ns
DRVH Propagation Delay
4, 5
tpdhDRVH
VBST – VSW = 4.6 V, VDLY = 0 V
10
22
40
ns
RDLY
≥ 120 kΩ
100
200
ns
(See Figure 4)
tpdlDRVH
40
70
ns
LOW-SIDE DRIVER (DRVL)
Output Resistance, DRVL–VCC
1.6
3.0
Output Resistance, DRVL–GND
1.0
3.0
DRVL Transition Times
4
trDRVL
VBST – VSW = 4.6 V
25
40
ns
(See Figure 4)
tfDRVL
VBST – VSW = 4.6 V
20
30
ns
DRVL Propagation Delay
4, 5, 6
tpdhDRVL
VBST – VSW = 4.6 V
10
30
38
ns
(See Figure 4)
tpdlDRVL
VBST – VSW = 4.6 V
10
25
ns
SW Transition Timeout
7
tSWTO
VBST – VSW = 4.6 V
130
300
ns
Zero-Crossing Threshold
VZC
1.6
V
NOTES
1All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
2Including I
BSTQ quiescent current.
3The signal source driving the pin must have 70
µA (typ) pull-down strength to make a high-to-low transient, and 20 µA (typ) pull-up strength to make a low-to-high
transient. The pin does not represent load (<100 nA) in static low (<0.8 V) and static high (>2.0 V) logic states (see TPC 3.) The pin can be driven with standard
TTL logic level source.
4Guaranteed by characterization.
5For propagation delays, tpdh refers to the specified signal going high, tpdl refers to it going low.
6Propagation delay measured until DRVL begins its transition.
7The turn-on of DRVL is initiated after IN goes low by either V
SW crossing a ~1.6 V threshold or by expiration of t SWTO.
Specifications subject to change without notice.



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