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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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DAC8412 Datenblatt(PDF) 2 Page - Analog Devices |
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DAC8412 Datenblatt(HTML) 2 Page - Analog Devices |
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2 / 14 page  –2– REV. D DAC8412/DAC8413–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units Integral Nonlinearity Error INL E Grade 0.25 ±0.5 LSB INL F Grade ±1 LSB Differential Nonlinearity Error DNL Monotonic Over Temperature –1 LSB Min-Scale Error VZSE RL = 2 k Ω±2 LSB Full-Scale Error VFSE RL = 2 k Ω±2 LSB Min-Scale Tempco TCVZSE RL = 2 k Ω 15 ppm/ °C Full-Scale Tempco TCVFSE RL = 2 k Ω 20 ppm/ °C Linearity Matching Adjacent DAC Matching ±1 LSB REFERENCE Positive Reference Input Voltage Range Note 2 VREFL + 2.5 VDD – 2.5 V Negative Reference Input Voltage Range Note 2 –10 VREFH – 2.5 V Reference High Input Current IREFH –2.75 +1.5 +2.75 mA Reference Low Input Current IREFL 0 +2 +2.75 mA Large Signal Bandwidth BW –3 dB, VREFH = 0 V to +10 V p-p 160 kHz AMPLIFIER CHARACTERISTICS Output Current IOUT RL = 2 k Ω, C L = 100 pF –5 +5 mA Settling Time tS to 0.01%, 10 V Step, RL = 1 k Ω 10 µs Slew Rate SR 10% to 90% 2.2 V/ µs Analog Crosstalk 72 dB LOGIC CHARACTERISTICS Logic Input High Voltage VINH TA = +25 °C2.4 V Logic Input Low Voltage VINL TA = +25 °C 0.8 V Logic Output High Voltage VOH IOH = +0.4 mA 2.4 V Logic Output Low Voltage VOL IOL = –1.6 mA 0.4 V Logic Input Current IIN 1 µA Input Capacitance CIN 8pF Digital Feedthrough 3 VREFH = +2.5 V, VREFL = 0 V 5 nV-s LOGIC TIMING CHARACTERISTICS 3 Note 4 Chip Select Write Pulsewidth tWCS 80 ns Write Setup tWS tWCS = 80 ns 0 ns Write Hold tWH tWCS = 80 ns 0 ns Address Setup tAS 0ns Address Hold tAH 0ns Load Setup tLS 70 ns Load Hold tLH 30 ns Write Data Setup tWDS tWCS = 80 ns 20 ns Write Data Hold tWDH tWCS = 80 ns 0 ns Load Data Pulsewidth tLDW 170 ns Reset Pulsewidth tRESET 140 ns Chip Select Read Pulsewidth tRCS 130 ns Read Data Hold tRDH tRCS = 130 ns 0 ns Read Data Setup tRDS tRCS = 130 ns 0 ns Data to Hi Z tDZ CL = 10 pF 200 ns Chip Select to Data tCSD CL = 100 pF 160 ns SUPPLY CHARACTERISTICS Power Supply Sensitivity PSS 14.25 V ≤ VDD ≤ 15.75 V 150 ppm/V Positive Supply Current IDD VREFH = +2.5 V 8.5 12 mA Negative Supply Current ISS –10 –6.5 mA Power Dissipation PDISS 330 mW NOTES 1All supplies can be varied ± 5%, and operation is guaranteed. Device is tested with nominal supplies. 2Operation is guaranteed over this reference range, but linearity is neither tested nor guaranteed. 3All parameters are guaranteed by design. 4All input control signals are specified with tr = tf = 5 ns (10% to 90% of +5 V) and timed from a voltage level of 1.6 V. Specifications subject to change without notice. (@ VDD = +15.0 V, VSS = –15.0 V, VLOGIC = +5.0 V, VREFH = +10.0 V, VREFL = –10.0 V, –40 C ≤ TA ≤ +85 C unless otherwise noted. See Note 1 for supply variations.) |
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