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CSD18533KCS Datenblatt(PDF) 4 Page - Texas Instruments

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Teilenummer CSD18533KCS
Bauteilbeschribung  60-V, N-Channel NexFET Power MOSFETs
PDF  9 Pages
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

CSD18533KCS Datenblatt(HTML) 4 Page - Texas Instruments

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0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =75A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
0.5
0.8
1.1
1.4
1.7
2
2.3
2.5
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
ID = 250uA
G001
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
8
10
12
14
16
18
20
VGS - Gate-to- Source Voltage (V)
TC = 25°C Id = 75A
TC = 125ºC Id = 75A
G001
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Qg - Gate Charge (nC)
ID = 75A
VDS = 30V
G001
10
100
1000
10000
50000
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G001
CSD18533KCS
SLPS362A – SEPTEMBER 2012 – REVISED JANUARY 2013
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
4
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Product Folder Links: CSD18533KCS



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