OP186 datasheet(2/12 Pages) AD

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OP186–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

0.8

°C ≤ T

≤ +125°C6

Input Bias Current

°C ≤ T

≤ +125°C10

Input Offset Current

IOS

0.1

°C ≤ T

≤ +125°C5

Input Voltage Range

VCM

1.2

Common-Mode Rejection Ratio

CMRR

VCM = 0 V to 1.2 V

°C ≤ T

≤ +125°C60

Large Signal Voltage Gain

AVO

RL = 1 M

Ω , V

O = 0.3 V to 1.9 V

V/mV

°C ≤ T

≤ +125°C

V/mV

Offset Voltage Drift

∆V

OS/

∆T

3.5

µV/°C

Bias Current Drift

∆I

∆T

pA/

°C

Offset Current Drift

∆I

OS/

∆T

pA/

°C

OUTPUT CHARACTERISTICS

Output Voltage High

VOH

RL = 100 k

Ω to GND

2.125

2.16

°C to +125°C

2.1

Output Voltage Low

VOL

RL = 100 k

Ω to V+

°C to +125°C75

Short Circuit Limit

ISC

±500

µA

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS = 2.2 V to 12 V

°C ≤ T

≤ +125°C76

Supply Current/Amplifier

ISY

µA

°C ≤ T

A ≤ +125°C

5.5

µA

DYNAMIC PERFORMANCE

Slew Rate

RL = 100 k

Ω, C

L = 15 pF

V/ms

Turn-On Time

AV = 1, VO = 1

µs

AV = 20, VO = 1

µs

Gain Bandwidth Product

GBP

150

kHz

Phase Margin

Φo

Degrees

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

pA/

√Hz

NOTE

OS is tested under a no load condition.

Specifications subject to change without notice.

(VS = +2.2 V, VCM = +1.1 V, TA = +25 C unless otherwise noted)

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