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OP275GS Datenblatt(PDF) 3 Page - Analog Devices

Teilenummer OP275GS
Bauteilbeschribung  Dual Bipolar/JFET, Audio Operational Amplifier
PDF  12 Pages
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OP275GS Datenblatt(HTML) 3 Page - Analog Devices

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OP275
REV. A
–3–
Parameter
Symbol
Conditions
Limit
Units
Offset Voltage
VOS
1mV max
Input Bias Current
IB
VCM = 0 V
350
nA max
Input Offset Current
IOS
VCM = 0 V
50
nA max
Input Voltage Range
1
VCM
±10.5
V min
Common-Mode Rejection Ratio
CMRR
VCM =
±10.5 V
80
dB min
Power Supply Rejection Ratio
PSRR
V =
±4.5 V to ±18 V
85
dB min
Large Signal Voltage Gain
AVO
RL = 2 k
250
V/mV min
Output Voltage Range
VO
RL = 10 k
Ω±13.5
V min
Supply Current
ISY
VO = 0 V, RL = ∞
5
mA max
NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
1Guaranteed by CMRR test.
Specifications subject to change without notice.
WAFER TEST LIMITS (@ V
S =
15.0 V, TA = +25 C unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±22 V
Input Voltage
2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±22 V
Differential Input Voltage
2 . . . . . . . . . . . . . . . . . . . . . . .
±7.5 V
Output Short-Circuit Duration to GND
3
. . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range
OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300
°C
Package Type
θ
JA
4
θ
JC
Units
8-Pin Plastic DIP (P)
103
43
°C/W
8-Pin SOIC (S)
158
43
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages greater than
±22 V, the absolute maximum input voltage is
equal to the supply voltage.
3Shorts to either supply may destroy the device. See data sheet for full details.
4
θ
JA is specified for the worst case conditions, i.e.,
θ
JA is specified for device in socket
for cerdip, P-DIP, and LCC packages;
θ
JA is specified for device soldered in circuit
board for SOIC package.
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP275 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
ORDERING GUIDE
Model
Temperature Range
Package Option
OP275GP
–40
°C to +85°C
8-Pin Plastic DIP
OP275GS
–40
°C to +85°C
8-Pin SOIC
OP275GSR
–40
°C to +85°C
SO-8 Reel, 2500 pcs.
OP275GBC
+25
°C
DICE
DICE CHARACTERISTICS
Die Size 0.070
× 0.108 in. (7,560 sq. mils)
Substrate is connected to V–



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