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STP210N75F6 Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STP210N75F6
Bauteilbeschribung  N-channel 75 V, 3 mΩ, 120 A TO-220 STripFET™VI DeepGATE??Power MOSFET
PDF  13 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP210N75F6 Datenblatt(HTML) 5 Page - STMicroelectronics

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STP210N75F6
Electrical characteristics
Doc ID 018507 Rev 1
5/13
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 40 V, ID = 60 A
RG =4.7 Ω VGS = 10 V
(see Figure 13)
-
34
70
-
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
-
154
71
-
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
-
120
A
ISDM
(1)
1.
Current limited by package.
Source-drain current (pulsed)
-
480
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 120 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
60
144
4.8
ns
nC
A



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