MAXIMUM RATINGS

All Ratings: T

C

= 25

°C unless otherwise specified.

APT1002RCN 1000V 5.5A 2.00

Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

Bend, Oregon 97702-1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61

APT Website - http://www.advancedpower.com

POWER MOS IV

TM

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

G

D

S

TO-254

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

C

= 25

°C

Gate-Source Voltage

Total Power Dissipation @ T

C

= 25

°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

APT1002RCN

1000

5.5

22

±30

150

1.2

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

W/

°C

°C

STATIC ELECTRICAL CHARACTERISTICS

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

1000

5.5

2.00

250

1000

±100

2

4

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250

µA)

DS

> I

D

(ON) x R

DS

(ON) Max, V

GS

= 10V)

GS

= 10V, 0.5 I

D

[Cont.])

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125

°C)

Gate-Source Leakage Current (V

GS

=

±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 1.0mA)

Symbol

BV

DSS

I

D

(ON)

R

DS

(ON)

I

DSS

I

GSS

V

GS

(TH)

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1

SOA2

I

LM

Characteristic

Safe Operating Area

Safe Operating Area

Inductive Current Clamped

Test Conditions

V

DS

= 0.4 V

DSS

, I

DS

= P

D

/ 0.4 V

DSS

, t = 1 Sec.

I

DS

= I

D

[Cont.], V

DS

= P

D

/ I

D

MIN

TYP

MAX

150

150

5.5

UNIT

Watts

Amps