STU6N65K3 datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STF6N65K3, STFI6N65K3, STU6N65K3

4/16

Doc ID 18424 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

0.8

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 9

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3.75

4.5

RDS(on

Static drain-source

on-resistance

VGS = 10 V, ID = 2.7 A

1.1

1.3

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

880

Co(tr)

(1)

Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss

when VDS increases from 0 to 80% VDSS

Eq. capacitance time

VGS = 0, VDS = 0 to 520 V

-43

Co(er)

(2)

Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Coss when VDS increases from 0 to 80% VDSS

Eq. capacitance

energy related

-27

Intrinsic gate

resistance

f = 1 MHz open drain

3.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 500 V, ID = 5.4 A,

VGS = 10 V

(see Figure 18)

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