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ACE3422B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE3422B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
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2 / 6 page ![]() ACE3422B N-Channel Enhancement Mode Field Effect Transistor VER 1.3 2 Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 60 V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1.0 3.0 Gate Leakage Current IGSS VDS=0V,VGS=±20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA Drain-Source On-Resistance RDS(ON) VGS=10V, ID=2.6A 82 100 m Ω VGS=4.5V, ID=2.8A 96 130 Forward Transconductance gfs* VDS=5V,ID=2.6A 15 S Diode Forward Voltage VSD VGS=0V, ISD=1A 0.8 1.2 V Maximum Body-Diode Continuous Current IS 2.5 A Switching Total Gate Charge Qg VDS=30V, VGS=4.5V, ID=2.6A 6.5 nC Gate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 2.7 Turn-On Delay Time td(on) VGS=10V, VDS=20V, RL=20Ω, RGEN=1Ω, 10 ns Turn-On Rise Time tr 11 Turn-Off Delay Time td(off) 29 Turn- Off Rise Time tf 3 Dynamic Input Capacitance Ciss VDS=30V, VGS=0V f=1MHz 350 pF Output Capacitance Coss 40 Reverse Transfer Capacitance Crss 12 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.4 2 Ω Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤10s thermal resistance rating. |
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