Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

ACE3422B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE3422B
Bauteilbeschribung  N-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE3422B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD.

  ACE3422B Datasheet HTML 1Page - ACE Technology Co., LTD. ACE3422B Datasheet HTML 2Page - ACE Technology Co., LTD. ACE3422B Datasheet HTML 3Page - ACE Technology Co., LTD. ACE3422B Datasheet HTML 4Page - ACE Technology Co., LTD. ACE3422B Datasheet HTML 5Page - ACE Technology Co., LTD. ACE3422B Datasheet HTML 6Page - ACE Technology Co., LTD.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
ACE3422B
N-Channel Enhancement Mode Field Effect Transistor
VER 1.3
2
Electrical Characteristics
(TA=25℃, unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250uA
60
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
1.0
3.0
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1
uA
Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=2.6A
82
100
m
Ω
VGS=4.5V, ID=2.8A
96
130
Forward Transconductance
gfs*
VDS=5V,ID=2.6A
15
S
Diode Forward Voltage
VSD
VGS=0V, ISD=1A
0.8
1.2
V
Maximum Body-Diode
Continuous Current
IS
2.5
A
Switching
Total Gate Charge
Qg
VDS=30V, VGS=4.5V,
ID=2.6A
6.5
nC
Gate-Source Charge
Qgs
2.2
Gate-Drain Charge
Qgd
2.7
Turn-On Delay Time
td(on)
VGS=10V, VDS=20V, RL=20Ω,
RGEN=1Ω,
10
ns
Turn-On Rise Time
tr
11
Turn-Off Delay Time
td(off)
29
Turn- Off Rise Time
tf
3
Dynamic
Input Capacitance
Ciss
VDS=30V, VGS=0V
f=1MHz
350
pF
Output Capacitance
Coss
40
Reverse Transfer Capacitance
Crss
12
Gate resistance
Rg
VGS=0V, VDS=0V, f=1MHz
1.4
2
Ω
Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJA and lead to ambient.
D.
The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t
≤10s thermal resistance rating.



Html Pages

1 2 3 4 5 6


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com