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ACE8202B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE8202B
Bauteilbeschribung  Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
PDF  7 Pages
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE8202B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD.

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ACE8202B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
VER 1.2
2
Ordering information
ACE8202B XX + H
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.4
0.65
1
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
6.5
10
uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
Maximum Body-Diode
Continuous Current
IS
2.5
A
Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=8A
15.7
21
m
Ω
VGS=2.5V, ID=7A
26
35
Forward Transconductance
gfs
VDS=5V,ID=7A
34
S
Diode Forward Voltage
VSD
ISD=2.5A, VGS=0V
0.77
1
V
Switching
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=7A
11
nC
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
3.2
Turn-On Time
td(on)
VGS=5V, RL=2.5Ω, VDS=10V,
RGEN=3Ω
300
nS
tr
600
Turn-Off Time
td(off)
790
tf
440
Dynamic
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
920
pF
Output Capacitance
Coss
155
REVERSE Transfer Capacitance
Crss
75
NN : DFN3*3-8L
Pb - free
Halogen - free



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