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ACE8601B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD.

Teilenummer ACE8601B
Bauteilbeschribung  Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
PDF  7 Pages
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Hersteller  ACE [ACE Technology Co., LTD.]
Direct Link  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE8601B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD.

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ACE8601B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
VER 1.2
2
Ordering information
ACE8601B XX + H
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V, ID=250 uA
20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.4
0.52
1
Gate Leakage Current
IGSS
VDS=0V,VGS=±8V
10
uA
Zero Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
uA
Maximum Body-Diode
Continuous Current
IS
2.5
A
Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=8A
16.2
21
m
Ω
VGS=2.5V, ID=7A
19.4
25
VGS=1.8V, ID=6A
24.4
33
Forward Transconductance
gfs
VDS=5V,ID=6.5A
13
S
Diode Forward Voltage
VSD
ISD=2.5A, VGS=0V
0.67
1.6
V
Switching
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=8A
13.8
17.94
nC
Gate-Source Charge
Qgs
4.1
5.33
Gate-Drain Charge
Qgd
5.6
7.28
Turn-On Time
td(on)
VGS=5V, RL=1.5Ω, VDS=10V,
RGEN=3Ω
6.2
12.4
nS
tr
12.7
25.4
Turn-Off Time
td(off)
51.7
103.4
tf
16
32
Dynamic
Input Capacitance
Ciss
VGS=0V, VDS=10V, f=1MHz
1160
pF
Output Capacitance
Coss
104
REVERSE Transfer Capacitance
Crss
29
NN : DFN3*3-8L
Pb - free
Halogen - free



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