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TPDV1025RG Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer TPDV1025RG
Bauteilbeschribung  25 A high voltage Triacs
PDF  7 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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TPDV1025RG Datenblatt(HTML) 3 Page - STMicroelectronics

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TPDVxx25
Characteristics
Doc ID 18268 Rev 2
3/7
Table 4.
Gate characteristics (maximum values)
Symbol
Parameter
Value
Unit
PG(AV)
Average gate power dissipation
1
W
PGM
Peak gate power dissipation
tp = 20 µs
40
W
IGM
Peak gate current
tp = 20 µs
8
A
VGM
Peak positive gate voltage
tp = 20 µs
16
V
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
50
°C/W
Rth(j-c) DC
Junction to case for DC
1.5
°C/W
Rth(j-c) AC
Junction to case for 360 °Conduction angle (F = 50 Hz)
1.1
°C/W
Figure 1.
Max. rms power dissipation versus
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Figure 2.
Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
I
(A)
T(RMS)
α = 180°
α = 90°
α = 120°
40
30
20
10
0
0
5
10
15
20
25
α = 30°
α = 60°
180°
α
α
T
(°C)
amb
0
20
40
60
80
100
120
140
125
85
95
115
105
P(W)
T
(°C)
case
40
30
20
10
0
R = 1.5°C/W
th
R = 1°C/W
th
R = 0.5°C/W
th
R = 0°C/W
th
Rth case to ambient -
Figure 3.
On-state rms current versus case
temperature
Figure 4.
Relative variation of thermal
impedance versus pulse duration
I
(A)
T(RMS)
30
25
20
15
10
5
0
025
75
50
100
125
T
(°C)
case
α = 180°
K=[Z
/R
th(j-c)
th(j-c)]
t (s)
p
Zth(j-c)
Zth(j-a)
1.00
0.10
0.01
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3



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